document number: 94106 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 05-jun-08 1 fast soft recovery rectifier diode, 80 a 80epf..pbf soft recovery series vishay high power products features/description the 80epf..pbf fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop . the glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. this product series has been designed and qualified for industrial level and lead (pb)-free. applications ? output rectification and freewheeling in inverters, choppers and converters ? input rectifications where se vere restrictions on conducted emi should be met product summary v f at 40 a < 1.1 v t rr 70 ns v rrm 200 to 600 v to-247ac 2, 4 anode 1 anode 3 b as e common c a thode available pb-free rohs* compliant major ratings and characteristics symbol characteristics values units v rrm 200 to 600 v i f(av) sinusoidal waveform 80 a i fsm 1000 t rr 1 a, - 100 a/s 70 ns v f 40 a, t j = 25 c 1.1 v t j range - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma 80epf02pbf 200 3 00 17 80EPF04pbf 400 500 80epf06pbf 600 700 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 95 c, 180 conduction half sine wave 80 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 850 10 ms sine pulse, no voltage reapplied 1000 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 3 610 a 2 s 10 ms sine pulse, no voltage reapplied 5100 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 51 000 a 2 s * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94106 2 revision: 05-jun-08 80epf..pbf soft recovery series vishay high power products fast soft recovery rectifier diode, 80 a electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 80 a, t j = 25 c 1.25 v forward slope resistance r t t j = 125 c 3 .5 m threshold voltage v f(to) 0.85 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 17 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 40 apk 25 a/s 25 c 190 ns reverse recovery current i rr 3 .4 a reverse recovery charge q rr 0.5 c snap factor s 0.5 i fm t rr di dt i rm(rec) q rr t thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation 0. 3 5 c/w maximum thermal resistance, junction to ambient r thja 40 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.2 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (ibf in) maximum 12 (10) marking device cas e style to-247ac 80epf02 80EPF04 80epf06
document number: 94106 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 05-jun-08 3 80epf..pbf soft recovery series fast soft recovery rectifier diode, 80 a vishay high power products fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 150 0 maximum allowable case temperature (c) average forward current (a) 10 90 20 90 110 120 100 30 50 130 70 40 80 80 60 80epf.. series r thjc (dc) = 0.35 k/w conduction angle 30 60 90 120 180 140 ? 150 060 maximum allowable case temperature (c) average forward current (a) 100 110 140 120 20 40 130 140 100 80 120 80 80epf.. series r thjc (dc) = 0.35 k/w ? conduction period 30 60 90 120 180 dc 90 20 0 140 0 maximum average forward power loss (w) average forward current (a) 50 80 90 120 60 20 30 10 40 60 40 70 180 120 90 60 30 conduction angle rms limit 80epf.. series t j = 150 c 80 100 ? 20 0 180 0 maximum average forward power loss (w) average forward current (a) 80 140 40 20 60 60 120 40 100 140 100 120 80 dc 180 120 90 60 30 80epf.. series t j = 150 c ? conduction period rms limit 160 900 1 10 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 400 200 300 500 700 600 800 80epf.. series at any rated load condition and with rated v rrm applied following surge. initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s 1000 300 0.01 0.1 peak half sine wave forward current (a) pulse train duration (s) 600 200 400 500 800 1000 1 700 900 maximum non-repetitive surge current versus pulse train duration. initial t j = 150 c no voltage reapplied rated v rrm reapplied 80epf.. series
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94106 4 revision: 05-jun-08 80epf..pbf soft recovery series vishay high power products fast soft recovery rectifier diode, 80 a fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c 1000 10 1 0 1.5 3.0 instantaneous forward current (a) instantaneous forward voltage (v) 100 0.5 2.5 4.0 80epf.. series t j = 25 c t j = 150 c 1.0 2.0 3.5 0.22 0.04 0 40 120 200 t rr - maximum reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.12 0.08 0.18 160 0.14 0.10 0.06 0.16 80 80epf.. series t j = 25 c i fm = 1 a i fm = 10 a i fm = 20 a i fm = 40 a i fm = 125 a i fm = 80 a 0.20 0 0 80 120 160 200 t rr - maximum reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.3 0.4 0.2 0.6 40 80epf.. series t j = 150 c i fm = 1 a i fm = 10 a i fm = 20 a i fm = 40 a i fm = 80 a 0.5 0.1 0 0 80 120 200 q rr - maximum reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 3.0 1.0 2.0 4.0 160 40 80epf.. series t j = 25 c i fm = 125 a i fm = 1 a i fm = 10 a i fm = 20 a i fm = 40 a i fm = 80 a 3.5 2.5 1.5 0.5 0 0 80 120 160 200 q rr - maximum reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 2 4 6 8 14 40 80epf.. series t j = 150 c i fm = 80 a i fm = 40 a i fm = 20 a i fm = 10 a i fm = 1 a 10 12
document number: 94106 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 05-jun-08 5 80epf..pbf soft recovery series fast soft recovery rectifier diode, 80 a vishay high power products fig. 12 - recovery current characteristics, t j = 25 c fig. 1 3 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 22 0 0 80 120 160 200 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 10 20 4 14 40 i fm = 125 a i fm = 80 a i fm = 40 a i fm = 20 a i fm = 10 a i fm = 1 a 80epf.. series t j = 25 c 18 16 12 8 6 2 20 0 0 40 120 160 200 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 40 10 30 80 80epf.. series t j = 150 c 5 15 25 35 45 i fm = 80 a i fm = 40 a i fm = 20 a i fm = 10 a i fm = 1 a 0.01 0.0001 0.001 0.01 0.1 square wave pulse duration (s) z thjc - transient thermal impedance (k/w) 0.1 1 10 steady state value (dc operation) 80epf.. series single pulse d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 1
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94106 6 revision: 05-jun-08 80epf..pbf soft recovery series vishay high power products fast soft recovery rectifier diode, 80 a ordering information table links to related documents dimensions http://www.vishay.com/doc?9522 3 part marking information http://www.vishay.com/doc?95226 1 - current rating (80 = 80 a) 2 - circuit configuration: e = single diode 3 - package: p = to-247ac 4 - type of silicon: f = fast diode 5 - voltage code x 100 = v rrm 6 - none = standard production pbf = lead (pb)-free 02 = 200 v 04 = 400 v 06 = 600 v device code 5 13 24 6 80 e p f 06 pbf
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
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